the specs for the 2SK163
2SK163 MOSFET transistor datasheet. Parameters and characteristics.
Type Designator: 2SK163
Type of 2SK163 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 400mW
Maximum drain-source voltage (Uds): 50V
Maximum drain-gate voltage (Udg):
Maximum gate-source voltage (Ugs):
Maximum drain current (Id): 30mA
Maximum junction temperature (Tj): 150?C
Rise Time of 2SK163 transistor (tr): 9mS
Drain-source Capacitance (Cd), pf:
Maximum drain-source on-state resistance (Rds), Ohm:
Manufacturer of 2SK163 transistor: NEC
Package: TO-92
Application: AF low noise amplification
BS170 MOSFET transistor datasheet. Parameters and characteristics.
Type Designator: BS170
Type of BS170 transistor: MOSFET
Type of control channel: N-Channel
Maximum power dissipation (Pd): 0.83W
Maximum drain-source voltage (Uds): 60V
Maximum drain-gate voltage (Udg):
Maximum gate-source voltage (Ugs):
Maximum drain current (Id): 0.5A
Maximum junction temperature (Tj): 150?C
Rise Time of BS170 transistor (tr):
Drain-source Capacitance (Cd), pf:
Maximum drain-source on-state resistance (Rds), Ohm: 5
Manufacturer of BS170 transistor: FAIRCHILD
Package: TO-92
Application: Trough-Hole MOSFET
the cross reference page...
http://alltransistors.com/mosfet/cr...&id=0.03&tj=150°C&fr=&cd=&rds=&mnf=&caps=TO92